s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) @ vgs=4.5v 10 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to251 package. n-channel logic enhancement mode field effect transistor ver 1.0 www.samhop.com.tw oct,12,2011 1 details are subject to change without notice. g g s s s t u serie s to - 2 5 2 aa ( d - p a k ) g g s s d d s t d serie s to - 2 5 1 ( i - p a k ) stu/d432l g r e r r p p r p p o r r o v ds v gs i dm a i d units parameter 40 v v 20 gate-source voltage drain-source voltage absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t c =25 c w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 121 42 123 42 34 27
4 symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1 v g fs s v sd c iss 1290 pf c oss 175 pf c rss 152 pf q g 19 nc 28 nc q gs 70 nc q gd 30 t d(on) 25 ns t r 2.1 ns t d(off) 8 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =20v,i d =21a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =21a v ds =10v , i d =21a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =17a m ohm c f=1.0mhz c v ds =20v,i d =21a, v gs =10v drain-source diode characteristics v gs =0v,i s =2a 0.76 1.3 v notes stu/d432l ver 1.0 www.samhop.com.tw oct,12,2011 2 nc v ds =20v,i d =21a,v gs =4.5v 12.2 a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ 1.5 810 11 15 39
stu/d432l ver 1.0 www.samhop.com.tw oct,12,2011 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 100 80 60 40 20 0 2.0 1.8 1.6 1.4 1.2 1.0 0 0 25 50 125 100 75 150 0 32 24 16 8 1 20 40 60 80 100 1 40 28 21 14 7 0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.5 1.0 1.5 2.0 2.5 3.0 v gs =3v v gs =3.5 v v g s =4v v g s =4.5v v g s =5v v gs =6v v g s =10 v 35 0 0.8 1.6 2.4 3.2 4.0 4.8 tj=125 c -55 c 25 c v g s =1 0v v gs =4.5v v gs =10v i d =21a v gs =4.5v i d =17a v ds =v gs i d =250ua i d =250ua
stu/d432l ver 1.0 www.samhop.com.tw oct,12,2011 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge 30 25 20 15 10 5 0 10 0 i d =21a 20.0 10.0 1.0 01.2 0.96 0.72 0.48 0.24 5.0 10 15 20 25 30 1800 1500 1200 900 600 300 0 ciss 10 8 6 4 2 0 8 12 16 20 24 28 32 75 c 125 c 25 c 2468 i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 100 10 1 0.3 r d s ( on) limit dc 10ms 1 m s 10 0 us 1 0 us v gs =10v single pulse t c =25c switching time(ns) rg, gate resistance( ) figure 11. switching characteristics v ds =20v,i d =1a v gs =10v 500 100 10 1 100 10 1 td(on) tf tr td(off) 75 c 125 c 25 c coss crss 05 v ds =20v i d =21a 04
t p v (br )dss i as figure 13b. o fr m w ave s u nc l am p ed in d u ct i ve stu/d432l ver 1.0 www.samhop.com.tw oct,12,2011 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive test circuit figure 13a. r g i as 0.01 t p d.u.t l v ds + - dd 20v v
stu/d432l ver 1.0 www.samhop.com.tw oct,12,2011 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d432l ver 1.0 www.samhop.com.tw oct,12,2011 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.780 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 10 symbols e1 4.320 5.004 0.170 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067 0 15 0 15
stu/d432l ver 1.0 www.samhop.com.tw oct,12,2011 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
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